{
  "name": "HBM tracker",
  "url": "https://hbmtracker.com/",
  "license": "CC BY 4.0",
  "cite": "HBM Tracker, https://hbmtracker.com/",
  "updated": "2026-11-11",
  "fields": [
    {
      "key": "maker",
      "label": "Maker",
      "type": "enum",
      "description": "Memory manufacturer.",
      "filterable": true,
      "sortable": true,
      "enumValues": [
        "SK hynix",
        "Samsung",
        "Micron"
      ]
    },
    {
      "key": "generation",
      "label": "Generation",
      "type": "enum",
      "description": "Maker’s HBM generation designation.",
      "filterable": true,
      "sortable": true,
      "enumValues": [
        "HBM",
        "HBM2",
        "HBM2E",
        "HBM3",
        "HBM3E",
        "HBM4",
        "HBM4E"
      ]
    },
    {
      "key": "stack_height",
      "label": "DRAM layers",
      "type": "number",
      "unit": "high",
      "description": "DRAM dies in the stack; excludes the base die.",
      "filterable": true,
      "sortable": true
    },
    {
      "key": "capacity_gb",
      "label": "Stack capacity",
      "type": "number",
      "unit": "GB",
      "description": "Capacity of one stack, in the maker’s GB units; not accelerator total memory.",
      "filterable": true,
      "sortable": true
    },
    {
      "key": "pin_gbps",
      "label": "Pin rate",
      "type": "number",
      "unit": "Gb/s",
      "description": "Published pin rate. Read with Pin qualifier; a limit is not a guaranteed operating point.",
      "sortable": true
    },
    {
      "key": "pin_qualifier",
      "label": "Pin qualifier",
      "type": "string",
      "description": "“Up to”, “Over” and range lower bounds preserve the source’s qualification.",
      "sortable": true
    },
    {
      "key": "bandwidth_gbs",
      "label": "Stack bandwidth",
      "type": "number",
      "unit": "GB/s",
      "description": "Published bandwidth of one stack. Read with Bandwidth qualifier. TB/s is normalized to GB/s using 1,000.",
      "sortable": true
    },
    {
      "key": "bandwidth_qualifier",
      "label": "Bandwidth qualifier",
      "type": "string",
      "description": "The source’s bound or range, preserved alongside the numeric value.",
      "sortable": true
    },
    {
      "key": "bus_width",
      "label": "Interface",
      "type": "number",
      "unit": "bits",
      "description": "Data I/O width of one stack; not the complete accelerator bus.",
      "sortable": true
    },
    {
      "key": "base_die",
      "label": "Base die",
      "type": "string",
      "description": "Published base/buffer die implementation or foundry. Null means not disclosed in the cited evidence.",
      "sortable": true
    },
    {
      "key": "dram_process",
      "label": "DRAM process",
      "type": "string",
      "description": "Vendor’s process label, not a normalized physical dimension.",
      "sortable": true
    },
    {
      "key": "packaging",
      "label": "Bonding / package",
      "type": "string",
      "description": "Published stacking or package process.",
      "sortable": true
    },
    {
      "key": "status",
      "label": "Evidence status",
      "type": "enum",
      "description": "Last supported milestone; historical production does not imply current orderability.",
      "filterable": true,
      "sortable": true,
      "enumValues": [
        "Historical catalog",
        "Production reported",
        "Family production reported",
        "Catalogued",
        "Sampling",
        "Demonstrated",
        "Planned"
      ]
    },
    {
      "key": "status_date",
      "label": "Status evidence date",
      "type": "string",
      "description": "Date of the supporting publication, with original precision (YYYY, YYYY-MM or YYYY-MM-DD). Not necessarily the first shipment day.",
      "sortable": true
    },
    {
      "key": "sample_date",
      "label": "Sample evidence date",
      "type": "string",
      "description": "Publication confirming samples, preserving date precision; not an inferred qualification date.",
      "sortable": true
    },
    {
      "key": "production_date",
      "label": "Production evidence date",
      "type": "string",
      "description": "Publication confirming production or shipments. A report date, not an exact factory ramp date.",
      "sortable": true
    },
    {
      "key": "accelerators",
      "label": "Confirmed platform links",
      "type": "string",
      "description": "Platforms explicitly linked to this maker and variant by a first-party source. Design-in is distinguished from shipping.",
      "sortable": true
    },
    {
      "key": "notes",
      "label": "Reading notes",
      "type": "string",
      "description": "Variant-specific context, source conflicts, historical status and unconfirmed details.",
      "sortable": true
    }
  ],
  "records": [
    {
      "id": "micron-hbm2e-16gb",
      "name": "Micron HBM2E 16GB",
      "url": "https://www.micron.com/content/dam/micron/global/public/products/technical-marketing-brief/micron-hbm2e-memory-wp.pdf",
      "summary": "The 8-high configuration documented in Micron’s HBM2E technical brief.",
      "tags": [
        "HBM2E"
      ],
      "fields": {
        "maker": "Micron",
        "generation": "HBM2E",
        "stack_height": 8,
        "capacity_gb": 16,
        "pin_gbps": 3.2,
        "pin_qualifier": "Up to",
        "bandwidth_gbs": 410,
        "bandwidth_qualifier": "Up to",
        "bus_width": 1024,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Catalogued",
        "status_date": null,
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Technical brief tables 1 and 3 document the capacity, stack height and maximum family rating. The brief alone does not establish a variant-specific shipment date."
      },
      "sources": [
        {
          "url": "https://www.micron.com/content/dam/micron/global/public/products/technical-marketing-brief/micron-hbm2e-memory-wp.pdf",
          "title": "Micron: Micron HBM2E 16GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "bus_width",
            "status",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "micron-hbm2e-8gb",
      "name": "Micron HBM2E 8GB",
      "url": "https://www.micron.com/content/dam/micron/global/public/products/technical-marketing-brief/micron-hbm2e-memory-wp.pdf",
      "summary": "The 4-high configuration documented in Micron’s HBM2E technical brief.",
      "tags": [
        "HBM2E"
      ],
      "fields": {
        "maker": "Micron",
        "generation": "HBM2E",
        "stack_height": 4,
        "capacity_gb": 8,
        "pin_gbps": 3.2,
        "pin_qualifier": "Up to",
        "bandwidth_gbs": 410,
        "bandwidth_qualifier": "Up to",
        "bus_width": 1024,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Catalogued",
        "status_date": null,
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Technical brief tables 1 and 3 document the capacity, stack height and maximum family rating. The brief alone does not establish a variant-specific shipment date."
      },
      "sources": [
        {
          "url": "https://www.micron.com/content/dam/micron/global/public/products/technical-marketing-brief/micron-hbm2e-memory-wp.pdf",
          "title": "Micron: Micron HBM2E 8GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "bus_width",
            "status",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "micron-hbm3e-24gb",
      "name": "Micron HBM3E 24GB",
      "url": "https://www.micron.com/products/memory/hbm/hbm3e",
      "summary": "Micron’s eight-high HBM3E is linked to NVIDIA H200 and Blackwell platforms.",
      "tags": [
        "HBM3E"
      ],
      "fields": {
        "maker": "Micron",
        "generation": "HBM3E",
        "stack_height": 8,
        "capacity_gb": 24,
        "pin_gbps": 9.2,
        "pin_qualifier": "Over",
        "bandwidth_gbs": 1200,
        "bandwidth_qualifier": "Over",
        "bus_width": 1024,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Production reported",
        "status_date": "2024-02-26",
        "sample_date": null,
        "production_date": "2024-02-26",
        "accelerators": "NVIDIA H200 (shipping); HGX B200 / GB200 (available)",
        "notes": "Vendor lower bounds are preserved. Usable GPU memory can be smaller than the sum of nominal stack capacities."
      },
      "sources": [
        {
          "url": "https://www.micron.com/products/memory/hbm/hbm3e",
          "title": "Micron: Micron HBM3E 24GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "bus_width",
            "notes"
          ]
        },
        {
          "url": "https://micron.gcs-web.com/news-releases/news-release-details/micron-innovates-data-center-edge-nvidia",
          "title": "Micron: HBM3E platform design-ins",
          "accessed": "2026-11-11",
          "fields": [
            "accelerators"
          ]
        },
        {
          "url": "https://micron.gcs-web.com/news-releases/news-release-details/micron-commences-volume-production-industry-leading-hbm3e",
          "title": "Micron HBM3E production evidence",
          "accessed": "2026-11-11",
          "fields": [
            "status",
            "status_date",
            "production_date"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "micron-hbm3e-36gb",
      "name": "Micron HBM3E 36GB",
      "url": "https://www.micron.com/products/memory/hbm/hbm3e",
      "summary": "Micron’s twelve-high HBM3E is designed into NVIDIA Blackwell Ultra and AMD MI355X platforms.",
      "tags": [
        "HBM3E"
      ],
      "fields": {
        "maker": "Micron",
        "generation": "HBM3E",
        "stack_height": 12,
        "capacity_gb": 36,
        "pin_gbps": 9.2,
        "pin_qualifier": "Over",
        "bandwidth_gbs": 1200,
        "bandwidth_qualifier": "Over",
        "bus_width": 1024,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Production reported",
        "status_date": "2025-06-25",
        "sample_date": null,
        "production_date": "2025-06-25",
        "accelerators": "NVIDIA B300 / GB300 (design-in); AMD Instinct MI355X (design-in)",
        "notes": "Vendor lower bounds are preserved. Micron first reported 12-high volume production on its 20 March 2025 earnings call; the cited first-party remarks from 25 June 2025 repeat it alongside the MI355X design-in."
      },
      "sources": [
        {
          "url": "https://www.micron.com/products/memory/hbm/hbm3e",
          "title": "Micron: Micron HBM3E 36GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "bus_width",
            "notes"
          ]
        },
        {
          "url": "https://micron.gcs-web.com/news-releases/news-release-details/micron-innovates-data-center-edge-nvidia",
          "title": "Micron: HBM3E platform design-ins",
          "accessed": "2026-11-11",
          "fields": [
            "accelerators"
          ]
        },
        {
          "url": "https://micron.gcs-web.com/static-files/39bb28c4-dd18-4097-a1fe-e5eb4956bcfc",
          "title": "Micron HBM3E production evidence",
          "accessed": "2026-11-11",
          "fields": [
            "status",
            "status_date",
            "production_date"
          ]
        },
        {
          "url": "https://micron.gcs-web.com/static-files/39bb28c4-dd18-4097-a1fe-e5eb4956bcfc",
          "title": "Micron FQ3 2025: MI355X and HBM3E volume ramp",
          "accessed": "2026-11-11",
          "fields": [
            "accelerators"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "micron-hbm4-36gb",
      "name": "Micron HBM4 36GB",
      "url": "https://micron.gcs-web.com/node/50236/pdf",
      "summary": "Micron’s volume-shipping HBM4 stack is designed for NVIDIA Vera Rubin.",
      "tags": [
        "HBM4"
      ],
      "fields": {
        "maker": "Micron",
        "generation": "HBM4",
        "stack_height": 12,
        "capacity_gb": 36,
        "pin_gbps": 11,
        "pin_qualifier": "Over",
        "bandwidth_gbs": 2800,
        "bandwidth_qualifier": "Over",
        "bus_width": 2048,
        "base_die": "Micron in-house CMOS logic; node not disclosed",
        "dram_process": "1β (1-beta)",
        "packaging": null,
        "status": "Production reported",
        "status_date": "2026-03-16",
        "sample_date": null,
        "production_date": "2026-03-16",
        "accelerators": "NVIDIA Vera Rubin (designed for)",
        "notes": "The release reports volume shipments began in calendar Q1 2026. The evidence date is the March announcement; bandwidth and pin rate are vendor-tested lower bounds."
      },
      "sources": [
        {
          "url": "https://micron.gcs-web.com/node/50236/pdf",
          "title": "Micron: Micron HBM4 36GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "status",
            "status_date",
            "production_date",
            "accelerators",
            "notes"
          ]
        },
        {
          "url": "https://d18rn0p25nwr6d.cloudfront.net/CIK-0000723125/5dafce68-38e8-4cad-a8f3-ab56d04d73fd.pdf",
          "title": "Micron FY2026 Form 10-K, product section (PDF page 9)",
          "accessed": "2026-11-11",
          "fields": [
            "base_die",
            "dram_process"
          ]
        },
        {
          "url": "https://www.micron.com/products/memory/hbm/hbm4",
          "title": "Micron HBM4 interface specification",
          "accessed": "2026-11-11",
          "fields": [
            "bus_width"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "micron-hbm4-48gb",
      "name": "Micron HBM4 48GB",
      "url": "https://micron.gcs-web.com/node/50236/pdf",
      "summary": "Micron’s sixteen-high HBM4 sample increases capacity per placement over its twelve-high product.",
      "tags": [
        "HBM4"
      ],
      "fields": {
        "maker": "Micron",
        "generation": "HBM4",
        "stack_height": 16,
        "capacity_gb": 48,
        "pin_gbps": null,
        "pin_qualifier": null,
        "bandwidth_gbs": null,
        "bandwidth_qualifier": null,
        "bus_width": null,
        "base_die": "Micron in-house CMOS logic; node not disclosed",
        "dram_process": null,
        "packaging": null,
        "status": "Sampling",
        "status_date": "2026-03-16",
        "sample_date": "2026-03-16",
        "production_date": null,
        "accelerators": null,
        "notes": "The release confirms customer samples but does not give a separate 16H speed or bandwidth specification."
      },
      "sources": [
        {
          "url": "https://micron.gcs-web.com/node/50236/pdf",
          "title": "Micron: Micron HBM4 48GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "status",
            "status_date",
            "sample_date",
            "notes"
          ]
        },
        {
          "url": "https://d18rn0p25nwr6d.cloudfront.net/CIK-0000723125/5dafce68-38e8-4cad-a8f3-ab56d04d73fd.pdf",
          "title": "Micron FY2026 Form 10-K, product section (PDF page 9)",
          "accessed": "2026-11-11",
          "fields": [
            "base_die",
            "dram_process"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm2-24gb-prototype",
      "name": "Samsung 12-layer TSV · 24GB",
      "url": "https://news.samsung.com/global/samsung-electronics-develops-industrys-first-12-layer-3d-tsv-chip-packaging-technology",
      "summary": "A twelve-layer HBM packaging development announced before Samsung’s later HBM3 products.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM2",
        "stack_height": 12,
        "capacity_gb": 24,
        "pin_gbps": null,
        "pin_qualifier": null,
        "bandwidth_gbs": null,
        "bandwidth_qualifier": null,
        "bus_width": null,
        "base_die": null,
        "dram_process": null,
        "packaging": "12-layer 3D-TSV",
        "status": "Demonstrated",
        "status_date": "2019-10-07",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "A packaging development, not a verified shipping SKU. The source describes existing HBM2 products and a developed 24GB stack; no transfer rate is assigned."
      },
      "sources": [
        {
          "url": "https://news.samsung.com/global/samsung-electronics-develops-industrys-first-12-layer-3d-tsv-chip-packaging-technology",
          "title": "Samsung: Samsung 12-layer TSV · 24GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "packaging",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm2-aquabolt-8gb",
      "name": "Samsung Aquabolt 8GB",
      "url": "https://news.samsung.com/global/samsung-starts-producing-8-gigabyte-high-bandwidth-memory-2-with-highest-data-transmission-speed",
      "summary": "The second Samsung HBM2 revision raises the stated pin speed over the first-generation package.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM2",
        "stack_height": 8,
        "capacity_gb": 8,
        "pin_gbps": 2.4,
        "pin_qualifier": null,
        "bandwidth_gbs": 307.2,
        "bandwidth_qualifier": null,
        "bus_width": 1024,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Production reported",
        "status_date": "2018-01-11",
        "sample_date": null,
        "production_date": "2018-01-11",
        "accelerators": null,
        "notes": "Bandwidth follows Samsung’s explicit editor’s-note calculation. The 2.4 Gb/s figure is specified at 1.2 V."
      },
      "sources": [
        {
          "url": "https://news.samsung.com/global/samsung-starts-producing-8-gigabyte-high-bandwidth-memory-2-with-highest-data-transmission-speed",
          "title": "Samsung: Samsung Aquabolt 8GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "bandwidth_gbs",
            "bus_width",
            "status",
            "status_date",
            "production_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm2e-flashbolt-16gb",
      "name": "Samsung Flashbolt 16GB",
      "url": "https://news.samsung.com/global/samsung-to-advance-high-performance-computing-systems-with-launch-of-industrys-first-3rd-generation-16gb-hbm2e",
      "summary": "Samsung’s eight-layer HBM2E package uses denser DRAM dies than Aquabolt.",
      "tags": [
        "HBM2E"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM2E",
        "stack_height": 8,
        "capacity_gb": 16,
        "pin_gbps": 3.2,
        "pin_qualifier": null,
        "bandwidth_gbs": 410,
        "bandwidth_qualifier": null,
        "bus_width": null,
        "base_die": "Buffer chip",
        "dram_process": "10nm-class (1y)",
        "packaging": null,
        "status": "Planned",
        "status_date": "2020-02-04",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Market launch announcement; mass production was planned for the first half of 2020. The tested 4.2 Gb/s / 538 GB/s ceiling is not used as the product rating."
      },
      "sources": [
        {
          "url": "https://news.samsung.com/global/samsung-to-advance-high-performance-computing-systems-with-launch-of-industrys-first-3rd-generation-16gb-hbm2e",
          "title": "Samsung: Samsung Flashbolt 16GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "bandwidth_gbs",
            "base_die",
            "dram_process",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm2-flarebolt-4gb",
      "name": "Samsung HBM2 4GB · first generation",
      "url": "https://news.samsung.com/global/samsung-begins-mass-producing-worlds-fastest-dram-based-on-newest-high-bandwidth-memory-hbm-interface",
      "summary": "Samsung’s 4-die HBM2 package, before the Aquabolt revision.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM2",
        "stack_height": 4,
        "capacity_gb": 4,
        "pin_gbps": null,
        "pin_qualifier": null,
        "bandwidth_gbs": 256,
        "bandwidth_qualifier": null,
        "bus_width": null,
        "base_die": "Buffer die",
        "dram_process": null,
        "packaging": null,
        "status": "Production reported",
        "status_date": "2016-01-19",
        "sample_date": null,
        "production_date": "2016-01-19",
        "accelerators": null,
        "notes": "The January 2016 release confirms production of the 4GB package. Pin speed is not inferred from bandwidth."
      },
      "sources": [
        {
          "url": "https://news.samsung.com/global/samsung-begins-mass-producing-worlds-fastest-dram-based-on-newest-high-bandwidth-memory-hbm-interface",
          "title": "Samsung: Samsung HBM2 4GB · first generation",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "bandwidth_gbs",
            "base_die",
            "status",
            "status_date",
            "production_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm2-flarebolt-8gb",
      "name": "Samsung HBM2 8GB · first generation",
      "url": "https://news.samsung.com/global/samsung-increases-production-of-industrys-fastest-dram-8gb-hbm2-to-address-rapidly-growing-market-demand",
      "summary": "Samsung’s 8-die HBM2 package, before the Aquabolt revision.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM2",
        "stack_height": 8,
        "capacity_gb": 8,
        "pin_gbps": null,
        "pin_qualifier": null,
        "bandwidth_gbs": 256,
        "bandwidth_qualifier": null,
        "bus_width": null,
        "base_die": "Buffer die",
        "dram_process": null,
        "packaging": null,
        "status": "Production reported",
        "status_date": "2017-07-18",
        "sample_date": null,
        "production_date": "2017-07-18",
        "accelerators": null,
        "notes": "The 2017 release says this product was first introduced in June 2016; July 2017 is the production evidence date."
      },
      "sources": [
        {
          "url": "https://news.samsung.com/global/samsung-increases-production-of-industrys-fastest-dram-8gb-hbm2-to-address-rapidly-growing-market-demand",
          "title": "Samsung: Samsung HBM2 8GB · first generation",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "bandwidth_gbs",
            "base_die",
            "status",
            "status_date",
            "production_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm3-16gb",
      "name": "Samsung HBM3 16GB",
      "url": "https://semiconductor.samsung.com/dram/hbm/",
      "summary": "Samsung’s 8-high HBM3 capacity option for accelerator integration.",
      "tags": [
        "HBM3"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM3",
        "stack_height": 8,
        "capacity_gb": 16,
        "pin_gbps": 6.4,
        "pin_qualifier": "Up to",
        "bandwidth_gbs": 819,
        "bandwidth_qualifier": "Up to",
        "bus_width": 1024,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Production reported",
        "status_date": "2023-10-21",
        "sample_date": null,
        "production_date": "2023-10-21",
        "accelerators": null,
        "notes": "Samsung’s 2023 Memory Tech Day release confirms both 8H and 12H production. No named accelerator or qualified customer is assigned."
      },
      "sources": [
        {
          "url": "https://semiconductor.samsung.com/dram/hbm/",
          "title": "Samsung: Samsung HBM3 16GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "bus_width",
            "notes"
          ]
        },
        {
          "url": "https://news.samsung.com/global/samsung-electronics-holds-memory-tech-day-2023-unveiling-new-innovations-to-lead-the-hyperscale-ai-era",
          "title": "Samsung: HBM3 8H and 12H mass production",
          "accessed": "2026-11-11",
          "fields": [
            "status",
            "status_date",
            "production_date"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm3-24gb",
      "name": "Samsung HBM3 24GB",
      "url": "https://semiconductor.samsung.com/dram/hbm/",
      "summary": "Samsung’s 12-high HBM3 capacity option for accelerator integration.",
      "tags": [
        "HBM3"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM3",
        "stack_height": 12,
        "capacity_gb": 24,
        "pin_gbps": 6.4,
        "pin_qualifier": "Up to",
        "bandwidth_gbs": 819,
        "bandwidth_qualifier": "Up to",
        "bus_width": 1024,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Production reported",
        "status_date": "2023-10-21",
        "sample_date": null,
        "production_date": "2023-10-21",
        "accelerators": null,
        "notes": "Samsung’s 2023 Memory Tech Day release confirms both 8H and 12H production. No named accelerator or qualified customer is assigned."
      },
      "sources": [
        {
          "url": "https://semiconductor.samsung.com/dram/hbm/",
          "title": "Samsung: Samsung HBM3 24GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "bus_width",
            "notes"
          ]
        },
        {
          "url": "https://news.samsung.com/global/samsung-electronics-holds-memory-tech-day-2023-unveiling-new-innovations-to-lead-the-hyperscale-ai-era",
          "title": "Samsung: HBM3 8H and 12H mass production",
          "accessed": "2026-11-11",
          "fields": [
            "status",
            "status_date",
            "production_date"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm3e-24gb",
      "name": "Samsung HBM3E 24GB",
      "url": "https://semiconductor.samsung.com/dram/hbm/",
      "summary": "Samsung’s 8-high HBM3E option, using the current public portfolio rating.",
      "tags": [
        "HBM3E"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM3E",
        "stack_height": 8,
        "capacity_gb": 24,
        "pin_gbps": 9.2,
        "pin_qualifier": "Up to",
        "bandwidth_gbs": 1180,
        "bandwidth_qualifier": "Up to",
        "bus_width": 1024,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Catalogued",
        "status_date": null,
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Current portfolio: up to 9.2 Gb/s and 1,180 GB/s. Earlier Shinebolt publicity stated 9.8 Gb/s; the 2024 36GB development release stated 1,280 GB/s. Those announcement ceilings are not substituted for the current catalog rating."
      },
      "sources": [
        {
          "url": "https://semiconductor.samsung.com/dram/hbm/",
          "title": "Samsung: Samsung HBM3E 24GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "bus_width",
            "status",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm3e-36gb",
      "name": "Samsung HBM3E 36GB",
      "url": "https://semiconductor.samsung.com/dram/hbm/",
      "summary": "Samsung’s 12-high HBM3E option, using the current public portfolio rating.",
      "tags": [
        "HBM3E"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM3E",
        "stack_height": 12,
        "capacity_gb": 36,
        "pin_gbps": 9.2,
        "pin_qualifier": "Up to",
        "bandwidth_gbs": 1180,
        "bandwidth_qualifier": "Up to",
        "bus_width": 1024,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Catalogued",
        "status_date": null,
        "sample_date": null,
        "production_date": null,
        "accelerators": "AMD Instinct MI350X / MI355X (Samsung: primary HBM3E partner)",
        "notes": "Current portfolio: up to 9.2 Gb/s and 1,180 GB/s. Earlier Shinebolt publicity stated 9.8 Gb/s; the 2024 36GB development release stated 1,280 GB/s. Those announcement ceilings are not substituted for the current catalog rating."
      },
      "sources": [
        {
          "url": "https://semiconductor.samsung.com/dram/hbm/",
          "title": "Samsung: Samsung HBM3E 36GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "bus_width",
            "status"
          ]
        },
        {
          "url": "https://news.samsung.com/global/samsung-develops-industry-first-36gb-hbm3e-12h-dram",
          "title": "Samsung 36GB HBM3E development",
          "accessed": "2026-11-11",
          "fields": [
            "notes"
          ]
        },
        {
          "url": "https://news.samsung.com/global/samsung-and-amd-expand-strategic-collaboration-on-next-generation-ai-memory-solutions",
          "title": "Samsung and AMD: primary HBM3E partner for MI350X/MI355X",
          "accessed": "2026-11-11",
          "fields": [
            "accelerators"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm4-24gb",
      "name": "Samsung HBM4 24GB",
      "url": "https://news.samsung.com/global/samsung-ships-industry-first-commercial-hbm4-with-ultimate-performance-for-ai-computing",
      "summary": "The 24GB capacity option described in Samsung’s commercial HBM4 announcement.",
      "tags": [
        "HBM4"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM4",
        "stack_height": 12,
        "capacity_gb": 24,
        "pin_gbps": 11.7,
        "pin_qualifier": null,
        "bandwidth_gbs": 3300,
        "bandwidth_qualifier": "Up to",
        "bus_width": 2048,
        "base_die": "Samsung Foundry 4nm logic",
        "dram_process": "1c (6th-generation 10nm-class)",
        "packaging": null,
        "status": "Production reported",
        "status_date": "2026-02-12",
        "sample_date": null,
        "production_date": "2026-02-12",
        "accelerators": null,
        "notes": "The release describes 24–36GB through 12-layer stacking. Stable rate is 11.7 Gb/s, headroom up to 13 Gb/s; 3.3 TB/s is the maximum stack bandwidth, not the bandwidth at 11.7 Gb/s."
      },
      "sources": [
        {
          "url": "https://news.samsung.com/global/samsung-ships-industry-first-commercial-hbm4-with-ultimate-performance-for-ai-computing",
          "title": "Samsung: Samsung HBM4 24GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "bus_width",
            "base_die",
            "dram_process",
            "status",
            "status_date",
            "production_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm4-36gb",
      "name": "Samsung HBM4 36GB",
      "url": "https://news.samsung.com/global/samsung-ships-industry-first-commercial-hbm4-with-ultimate-performance-for-ai-computing",
      "summary": "The 36GB capacity option described in Samsung’s commercial HBM4 announcement.",
      "tags": [
        "HBM4"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM4",
        "stack_height": 12,
        "capacity_gb": 36,
        "pin_gbps": 11.7,
        "pin_qualifier": null,
        "bandwidth_gbs": 3300,
        "bandwidth_qualifier": "Up to",
        "bus_width": 2048,
        "base_die": "Samsung Foundry 4nm logic",
        "dram_process": "1c (6th-generation 10nm-class)",
        "packaging": null,
        "status": "Production reported",
        "status_date": "2026-02-12",
        "sample_date": null,
        "production_date": "2026-02-12",
        "accelerators": "AMD Instinct MI455X (primary HBM4 supply agreed, Mar 2026)",
        "notes": "The release describes 24–36GB through 12-layer stacking. Stable rate is 11.7 Gb/s, headroom up to 13 Gb/s; 3.3 TB/s is the maximum stack bandwidth, not the bandwidth at 11.7 Gb/s."
      },
      "sources": [
        {
          "url": "https://news.samsung.com/global/samsung-ships-industry-first-commercial-hbm4-with-ultimate-performance-for-ai-computing",
          "title": "Samsung: Samsung HBM4 36GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "bus_width",
            "base_die",
            "dram_process",
            "status",
            "status_date",
            "production_date",
            "notes"
          ]
        },
        {
          "url": "https://news.samsung.com/global/samsung-and-amd-expand-strategic-collaboration-on-next-generation-ai-memory-solutions",
          "title": "Samsung and AMD: primary HBM4 supply for MI455X",
          "accessed": "2026-11-11",
          "fields": [
            "accelerators"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm4-48gb",
      "name": "Samsung HBM4 48GB",
      "url": "https://news.samsung.com/global/samsung-ships-industry-first-commercial-hbm4-with-ultimate-performance-for-ai-computing",
      "summary": "The planned sixteen-layer expansion of Samsung’s HBM4 line.",
      "tags": [
        "HBM4"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM4",
        "stack_height": 16,
        "capacity_gb": 48,
        "pin_gbps": null,
        "pin_qualifier": null,
        "bandwidth_gbs": null,
        "bandwidth_qualifier": null,
        "bus_width": null,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Planned",
        "status_date": "2026-02-12",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Capacity expansion aligned to future customer timelines. Shipping and final speed are unconfirmed."
      },
      "sources": [
        {
          "url": "https://news.samsung.com/global/samsung-ships-industry-first-commercial-hbm4-with-ultimate-performance-for-ai-computing",
          "title": "Samsung: Samsung HBM4 48GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm4e-32gb",
      "name": "Samsung HBM4E 32GB",
      "url": "https://news.samsung.com/global/samsung-electronics-begins-shipment-of-industry-first-hbm4e-samples",
      "summary": "A planned 8-layer capacity extension named in Samsung’s HBM4E sample announcement.",
      "tags": [
        "HBM4E"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM4E",
        "stack_height": 8,
        "capacity_gb": 32,
        "pin_gbps": null,
        "pin_qualifier": null,
        "bandwidth_gbs": null,
        "bandwidth_qualifier": null,
        "bus_width": null,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Planned",
        "status_date": "2026-05-29",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "The announced lineup extension is not reported as sampling; speed, base die and availability remain unconfirmed for this variant."
      },
      "sources": [
        {
          "url": "https://news.samsung.com/global/samsung-electronics-begins-shipment-of-industry-first-hbm4e-samples",
          "title": "Samsung: Samsung HBM4E 32GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm4e-48gb",
      "name": "Samsung HBM4E 48GB",
      "url": "https://news.samsung.com/global/samsung-electronics-begins-shipment-of-industry-first-hbm4e-samples",
      "summary": "Samsung’s twelve-layer HBM4E sample with a denser DRAM stack.",
      "tags": [
        "HBM4E"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM4E",
        "stack_height": 12,
        "capacity_gb": 48,
        "pin_gbps": 14,
        "pin_qualifier": null,
        "bandwidth_gbs": 3600,
        "bandwidth_qualifier": "Up to",
        "bus_width": null,
        "base_die": "Samsung Foundry 4nm logic",
        "dram_process": "1c (6th-generation 10nm-class)",
        "packaging": null,
        "status": "Sampling",
        "status_date": "2026-05-29",
        "sample_date": "2026-05-29",
        "production_date": null,
        "accelerators": null,
        "notes": "Stable pin rate 14 Gb/s; performance scalable up to 16 Gb/s. Mass production is tied to customer schedules."
      },
      "sources": [
        {
          "url": "https://news.samsung.com/global/samsung-electronics-begins-shipment-of-industry-first-hbm4e-samples",
          "title": "Samsung: Samsung HBM4E 48GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "base_die",
            "dram_process",
            "status",
            "status_date",
            "sample_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "samsung-hbm4e-64gb",
      "name": "Samsung HBM4E 64GB",
      "url": "https://news.samsung.com/global/samsung-electronics-begins-shipment-of-industry-first-hbm4e-samples",
      "summary": "A planned 16-layer capacity extension named in Samsung’s HBM4E sample announcement.",
      "tags": [
        "HBM4E"
      ],
      "fields": {
        "maker": "Samsung",
        "generation": "HBM4E",
        "stack_height": 16,
        "capacity_gb": 64,
        "pin_gbps": null,
        "pin_qualifier": null,
        "bandwidth_gbs": null,
        "bandwidth_qualifier": null,
        "bus_width": null,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Planned",
        "status_date": "2026-05-29",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "The announced lineup extension is not reported as sampling; speed, base die and availability remain unconfirmed for this variant."
      },
      "sources": [
        {
          "url": "https://news.samsung.com/global/samsung-electronics-begins-shipment-of-industry-first-hbm4e-samples",
          "title": "Samsung: Samsung HBM4E 64GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm-4h",
      "name": "SK hynix HBM · 4-high",
      "url": "https://news.skhynix.com/en/the-story-of-sk-hynixs-hbm-development/",
      "summary": "The original four-layer HBM generation developed with AMD. The historical record connects the technology to the Fiji GPU family.",
      "tags": [
        "HBM"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM",
        "stack_height": 4,
        "capacity_gb": null,
        "pin_gbps": 1,
        "pin_qualifier": null,
        "bandwidth_gbs": null,
        "bandwidth_qualifier": null,
        "bus_width": null,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Historical catalog",
        "status_date": "2014",
        "sample_date": null,
        "production_date": null,
        "accelerators": "AMD Fiji (Radeon R9 Fury X)",
        "notes": "SK hynix puts first-generation HBM at 1 Gb/s per pin, which matches Fiji’s 512 GB/s over a 4,096-bit interface. A separate SK hynix retrospective quotes around 1,600 Mb/s. The retrospective dates the AMD collaboration to 2014; SK hynix’s heritage timeline separately dates initial TSV HBM development to December 2013. No bandwidth or capacity is inferred."
      },
      "sources": [
        {
          "url": "https://news.skhynix.com/en/the-story-of-sk-hynixs-hbm-development/",
          "title": "SK hynix: SK hynix HBM · 4-high",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "stack_height",
            "status",
            "status_date",
            "notes"
          ]
        },
        {
          "url": "https://ir.amd.com/news-events/press-releases/detail/629/amd-showcases-graphics-energy-efficient-computing-and-die-stacking-innovation-at-prestigious-hot-chips-27-conference",
          "title": "AMD: Fiji and memory partner SK Hynix",
          "accessed": "2026-11-11",
          "fields": [
            "accelerators"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/meet-the-engineers-leading-the-worlds-first-mass-production-of-hbm3/",
          "title": "SK hynix: first-generation HBM at 1 Gb/s per pin",
          "accessed": "2026-11-11",
          "fields": [
            "pin_gbps"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm2-2gb-1g",
      "name": "SK hynix HBM2 2GB · 1 Gb/s",
      "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
      "summary": "A 2-die HBM2 configuration in SK hynix’s Hot Chips product lineup. This 1 Gb/s bin carries the presentation’s stated 128 GB/s bandwidth.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM2",
        "stack_height": 2,
        "capacity_gb": 2,
        "pin_gbps": 1,
        "pin_qualifier": null,
        "bandwidth_gbs": 128,
        "bandwidth_qualifier": null,
        "bus_width": 1024,
        "base_die": "One logic buffer die",
        "dram_process": null,
        "packaging": null,
        "status": "Historical catalog",
        "status_date": "2016-08",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Hot Chips 28, slide 13 (PDF page 13). Historical declared capacity/speed configuration; no unique orderable part number or current availability claimed. The slide rounds the 1.6 Gb/s bin to 204 GB/s."
      },
      "sources": [
        {
          "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
          "title": "SK hynix: SK hynix HBM2 2GB · 1 Gb/s",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "stack_height",
            "capacity_gb",
            "pin_gbps",
            "bandwidth_gbs",
            "bus_width",
            "base_die",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm2-2gb-1p6g",
      "name": "SK hynix HBM2 2GB · 1.6 Gb/s",
      "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
      "summary": "A 2-die HBM2 configuration in SK hynix’s Hot Chips product lineup. This 1.6 Gb/s bin carries the presentation’s stated 204 GB/s bandwidth.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM2",
        "stack_height": 2,
        "capacity_gb": 2,
        "pin_gbps": 1.6,
        "pin_qualifier": null,
        "bandwidth_gbs": 204,
        "bandwidth_qualifier": null,
        "bus_width": 1024,
        "base_die": "One logic buffer die",
        "dram_process": null,
        "packaging": null,
        "status": "Historical catalog",
        "status_date": "2016-08",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Hot Chips 28, slide 13 (PDF page 13). Historical declared capacity/speed configuration; no unique orderable part number or current availability claimed. The slide rounds the 1.6 Gb/s bin to 204 GB/s."
      },
      "sources": [
        {
          "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
          "title": "SK hynix: SK hynix HBM2 2GB · 1.6 Gb/s",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "stack_height",
            "capacity_gb",
            "pin_gbps",
            "bandwidth_gbs",
            "bus_width",
            "base_die",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm2-2gb-2g",
      "name": "SK hynix HBM2 2GB · 2 Gb/s",
      "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
      "summary": "A 2-die HBM2 configuration in SK hynix’s Hot Chips product lineup. This 2 Gb/s bin carries the presentation’s stated 256 GB/s bandwidth.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM2",
        "stack_height": 2,
        "capacity_gb": 2,
        "pin_gbps": 2,
        "pin_qualifier": null,
        "bandwidth_gbs": 256,
        "bandwidth_qualifier": null,
        "bus_width": 1024,
        "base_die": "One logic buffer die",
        "dram_process": null,
        "packaging": null,
        "status": "Historical catalog",
        "status_date": "2016-08",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Hot Chips 28, slide 13 (PDF page 13). Historical declared capacity/speed configuration; no unique orderable part number or current availability claimed. The slide rounds the 1.6 Gb/s bin to 204 GB/s."
      },
      "sources": [
        {
          "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
          "title": "SK hynix: SK hynix HBM2 2GB · 2 Gb/s",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "stack_height",
            "capacity_gb",
            "pin_gbps",
            "bandwidth_gbs",
            "bus_width",
            "base_die",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm2-4gb-1g",
      "name": "SK hynix HBM2 4GB · 1 Gb/s",
      "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
      "summary": "A 4-die HBM2 configuration in SK hynix’s Hot Chips product lineup. This 1 Gb/s bin carries the presentation’s stated 128 GB/s bandwidth.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM2",
        "stack_height": 4,
        "capacity_gb": 4,
        "pin_gbps": 1,
        "pin_qualifier": null,
        "bandwidth_gbs": 128,
        "bandwidth_qualifier": null,
        "bus_width": 1024,
        "base_die": "One logic buffer die",
        "dram_process": null,
        "packaging": null,
        "status": "Historical catalog",
        "status_date": "2016-08",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Hot Chips 28, slide 13 (PDF page 13). Historical declared capacity/speed configuration; no unique orderable part number or current availability claimed. The slide rounds the 1.6 Gb/s bin to 204 GB/s."
      },
      "sources": [
        {
          "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
          "title": "SK hynix: SK hynix HBM2 4GB · 1 Gb/s",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "stack_height",
            "capacity_gb",
            "pin_gbps",
            "bandwidth_gbs",
            "bus_width",
            "base_die",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm2-4gb-1p6g",
      "name": "SK hynix HBM2 4GB · 1.6 Gb/s",
      "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
      "summary": "A 4-die HBM2 configuration in SK hynix’s Hot Chips product lineup. This 1.6 Gb/s bin carries the presentation’s stated 204 GB/s bandwidth.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM2",
        "stack_height": 4,
        "capacity_gb": 4,
        "pin_gbps": 1.6,
        "pin_qualifier": null,
        "bandwidth_gbs": 204,
        "bandwidth_qualifier": null,
        "bus_width": 1024,
        "base_die": "One logic buffer die",
        "dram_process": null,
        "packaging": null,
        "status": "Historical catalog",
        "status_date": "2016-08",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Hot Chips 28, slide 13 (PDF page 13). Historical declared capacity/speed configuration; no unique orderable part number or current availability claimed. The slide rounds the 1.6 Gb/s bin to 204 GB/s."
      },
      "sources": [
        {
          "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
          "title": "SK hynix: SK hynix HBM2 4GB · 1.6 Gb/s",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "stack_height",
            "capacity_gb",
            "pin_gbps",
            "bandwidth_gbs",
            "bus_width",
            "base_die",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm2-4gb-2g",
      "name": "SK hynix HBM2 4GB · 2 Gb/s",
      "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
      "summary": "A 4-die HBM2 configuration in SK hynix’s Hot Chips product lineup. This 2 Gb/s bin carries the presentation’s stated 256 GB/s bandwidth.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM2",
        "stack_height": 4,
        "capacity_gb": 4,
        "pin_gbps": 2,
        "pin_qualifier": null,
        "bandwidth_gbs": 256,
        "bandwidth_qualifier": null,
        "bus_width": 1024,
        "base_die": "One logic buffer die",
        "dram_process": null,
        "packaging": null,
        "status": "Historical catalog",
        "status_date": "2016-08",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Hot Chips 28, slide 13 (PDF page 13). Historical declared capacity/speed configuration; no unique orderable part number or current availability claimed. The slide rounds the 1.6 Gb/s bin to 204 GB/s."
      },
      "sources": [
        {
          "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
          "title": "SK hynix: SK hynix HBM2 4GB · 2 Gb/s",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "stack_height",
            "capacity_gb",
            "pin_gbps",
            "bandwidth_gbs",
            "bus_width",
            "base_die",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm2-8gb-1g",
      "name": "SK hynix HBM2 8GB · 1 Gb/s",
      "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
      "summary": "A 8-die HBM2 configuration in SK hynix’s Hot Chips product lineup. This 1 Gb/s bin carries the presentation’s stated 128 GB/s bandwidth.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM2",
        "stack_height": 8,
        "capacity_gb": 8,
        "pin_gbps": 1,
        "pin_qualifier": null,
        "bandwidth_gbs": 128,
        "bandwidth_qualifier": null,
        "bus_width": 1024,
        "base_die": "One logic buffer die",
        "dram_process": null,
        "packaging": null,
        "status": "Historical catalog",
        "status_date": "2016-08",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Hot Chips 28, slide 13 (PDF page 13). Historical declared capacity/speed configuration; no unique orderable part number or current availability claimed. The slide rounds the 1.6 Gb/s bin to 204 GB/s."
      },
      "sources": [
        {
          "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
          "title": "SK hynix: SK hynix HBM2 8GB · 1 Gb/s",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "stack_height",
            "capacity_gb",
            "pin_gbps",
            "bandwidth_gbs",
            "bus_width",
            "base_die",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm2-8gb-1p6g",
      "name": "SK hynix HBM2 8GB · 1.6 Gb/s",
      "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
      "summary": "A 8-die HBM2 configuration in SK hynix’s Hot Chips product lineup. This 1.6 Gb/s bin carries the presentation’s stated 204 GB/s bandwidth.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM2",
        "stack_height": 8,
        "capacity_gb": 8,
        "pin_gbps": 1.6,
        "pin_qualifier": null,
        "bandwidth_gbs": 204,
        "bandwidth_qualifier": null,
        "bus_width": 1024,
        "base_die": "One logic buffer die",
        "dram_process": null,
        "packaging": null,
        "status": "Historical catalog",
        "status_date": "2016-08",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Hot Chips 28, slide 13 (PDF page 13). Historical declared capacity/speed configuration; no unique orderable part number or current availability claimed. The slide rounds the 1.6 Gb/s bin to 204 GB/s."
      },
      "sources": [
        {
          "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
          "title": "SK hynix: SK hynix HBM2 8GB · 1.6 Gb/s",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "stack_height",
            "capacity_gb",
            "pin_gbps",
            "bandwidth_gbs",
            "bus_width",
            "base_die",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm2-8gb-2g",
      "name": "SK hynix HBM2 8GB · 2 Gb/s",
      "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
      "summary": "A 8-die HBM2 configuration in SK hynix’s Hot Chips product lineup. This 2 Gb/s bin carries the presentation’s stated 256 GB/s bandwidth.",
      "tags": [
        "HBM2"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM2",
        "stack_height": 8,
        "capacity_gb": 8,
        "pin_gbps": 2,
        "pin_qualifier": null,
        "bandwidth_gbs": 256,
        "bandwidth_qualifier": null,
        "bus_width": 1024,
        "base_die": "One logic buffer die",
        "dram_process": null,
        "packaging": null,
        "status": "Historical catalog",
        "status_date": "2016-08",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Hot Chips 28, slide 13 (PDF page 13). Historical declared capacity/speed configuration; no unique orderable part number or current availability claimed. The slide rounds the 1.6 Gb/s bin to 204 GB/s."
      },
      "sources": [
        {
          "url": "https://old.hotchips.org/wp-content/uploads/hc_archives/hc28/HC28.21-Tutorial-Epub/HC28.21.1-Next-Gen-Memory-Epub/HC28.21.130-High-Bandwidth-KEVIN_TRAN-SKHYNIX-VERSION_FINAL-dcrp-t1-4_.pdf",
          "title": "SK hynix: SK hynix HBM2 8GB · 2 Gb/s",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "stack_height",
            "capacity_gb",
            "pin_gbps",
            "bandwidth_gbs",
            "bus_width",
            "base_die",
            "status",
            "status_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm2e-16gb",
      "name": "SK hynix HBM2E 16GB",
      "url": "https://product.skhynix.com/products/dram/hbm.go",
      "summary": "The 8-high HBM2E option in SK hynix’s published portfolio, intended for AI and HPC integration.",
      "tags": [
        "HBM2E"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM2E",
        "stack_height": 8,
        "capacity_gb": 16,
        "pin_gbps": 3.6,
        "pin_qualifier": "Range 3.2–",
        "bandwidth_gbs": 460,
        "bandwidth_qualifier": "Range 410–",
        "bus_width": 1024,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Production reported",
        "status_date": "2020-07-02",
        "sample_date": null,
        "production_date": "2020-07-02",
        "accelerators": null,
        "notes": "Portfolio ranges are family ratings; a specific orderable speed bin is not identified."
      },
      "sources": [
        {
          "url": "https://product.skhynix.com/products/dram/hbm.go",
          "title": "SK hynix: SK hynix HBM2E 16GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "notes"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/sk-hynix-starts-mass-production-of-high-speed-dram-hbm2e/",
          "title": "SK hynix: 16GB HBM2E mass production, 1,024 I/Os",
          "accessed": "2026-11-11",
          "fields": [
            "status",
            "status_date",
            "production_date",
            "bus_width"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm2e-8gb",
      "name": "SK hynix HBM2E 8GB",
      "url": "https://product.skhynix.com/products/dram/hbm.go",
      "summary": "The 4-high HBM2E option in SK hynix’s published portfolio, intended for AI and HPC integration.",
      "tags": [
        "HBM2E"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM2E",
        "stack_height": 4,
        "capacity_gb": 8,
        "pin_gbps": 3.6,
        "pin_qualifier": "Range 3.2–",
        "bandwidth_gbs": 460,
        "bandwidth_qualifier": "Range 410–",
        "bus_width": 1024,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Catalogued",
        "status_date": null,
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Portfolio ranges are family ratings; a specific orderable speed bin is not identified."
      },
      "sources": [
        {
          "url": "https://product.skhynix.com/products/dram/hbm.go",
          "title": "SK hynix: SK hynix HBM2E 8GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "status",
            "notes"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/sk-hynix-starts-mass-production-of-high-speed-dram-hbm2e/",
          "title": "SK hynix: 16GB HBM2E mass production, 1,024 I/Os",
          "accessed": "2026-11-11",
          "fields": [
            "bus_width"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm3-16gb",
      "name": "SK hynix HBM3 16GB",
      "url": "https://news.skhynix.com/en/meet-the-engineers-leading-the-worlds-first-mass-production-of-hbm3/",
      "summary": "The eight-layer HBM3 stack announced for NVIDIA’s Hopper generation.",
      "tags": [
        "HBM3"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM3",
        "stack_height": 8,
        "capacity_gb": 16,
        "pin_gbps": 6.4,
        "pin_qualifier": "Up to",
        "bandwidth_gbs": 819,
        "bandwidth_qualifier": "Up to",
        "bus_width": null,
        "base_die": null,
        "dram_process": null,
        "packaging": null,
        "status": "Production reported",
        "status_date": "2022-06-08",
        "sample_date": null,
        "production_date": "2022-06-08",
        "accelerators": "NVIDIA H100 (HBM3 supply announced)",
        "notes": "The June release confirms HBM3 production and NVIDIA supply; accelerator configuration is set by the GPU vendor."
      },
      "sources": [
        {
          "url": "https://news.skhynix.com/en/meet-the-engineers-leading-the-worlds-first-mass-production-of-hbm3/",
          "title": "SK hynix: SK hynix HBM3 16GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "notes"
          ]
        },
        {
          "url": "https://product.skhynix.com/products/dram/hbm.go",
          "title": "SK hynix HBM portfolio",
          "accessed": "2026-11-11",
          "fields": [
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/sk-hynix-to-supply-industrys-first-hbm3-dram-to-nvidia/",
          "title": "SK hynix: HBM3 mass production and NVIDIA H100 supply",
          "accessed": "2026-11-11",
          "fields": [
            "accelerators",
            "status",
            "status_date",
            "production_date"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm3-24gb",
      "name": "SK hynix HBM3 24GB",
      "url": "https://news.skhynix.com/en/sk-hynix-develops-industrys-first-12-layer-hbm3/",
      "summary": "The twelve-layer HBM3 stack adds capacity while retaining the predecessor’s package height.",
      "tags": [
        "HBM3"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM3",
        "stack_height": 12,
        "capacity_gb": 24,
        "pin_gbps": 6.4,
        "pin_qualifier": "Up to",
        "bandwidth_gbs": 819,
        "bandwidth_qualifier": "Up to",
        "bus_width": null,
        "base_die": null,
        "dram_process": null,
        "packaging": "Advanced MR-MUF",
        "status": "Sampling",
        "status_date": "2023-04-20",
        "sample_date": "2023-04-20",
        "production_date": null,
        "accelerators": null,
        "notes": "The 2023 announcement reports samples and plans for supply in the second half; the plan is not converted into a shipment date."
      },
      "sources": [
        {
          "url": "https://news.skhynix.com/en/sk-hynix-develops-industrys-first-12-layer-hbm3/",
          "title": "SK hynix: SK hynix HBM3 24GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "status",
            "status_date",
            "sample_date",
            "packaging",
            "notes"
          ]
        },
        {
          "url": "https://product.skhynix.com/products/dram/hbm.go",
          "title": "SK hynix HBM portfolio",
          "accessed": "2026-11-11",
          "fields": [
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm3e-24gb",
      "name": "SK hynix HBM3E 24GB",
      "url": "https://product.skhynix.com/products/dram/hbm.go",
      "summary": "The eight-layer HBM3E production stack, with higher current portfolio ratings than the original launch.",
      "tags": [
        "HBM3E"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM3E",
        "stack_height": 8,
        "capacity_gb": 24,
        "pin_gbps": 9.6,
        "pin_qualifier": "At least",
        "bandwidth_gbs": 1230,
        "bandwidth_qualifier": "At least",
        "bus_width": null,
        "base_die": null,
        "dram_process": null,
        "packaging": "Advanced MR-MUF",
        "status": "Production reported",
        "status_date": "2024-03-19",
        "sample_date": null,
        "production_date": "2024-03-19",
        "accelerators": null,
        "notes": "Launch release stated up to 1.18 TB/s; this row uses the later portfolio’s 9.6+ Gb/s and 1.23+ TB/s. These are vendor ratings, not measured accelerator bandwidth."
      },
      "sources": [
        {
          "url": "https://product.skhynix.com/products/dram/hbm.go",
          "title": "SK hynix: SK hynix HBM3E 24GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "notes"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/sk-hynix-begins-volume-production-of-industry-first-hbm3e/",
          "title": "SK hynix HBM3E production announcement",
          "accessed": "2026-11-11",
          "fields": [
            "status",
            "status_date",
            "production_date",
            "packaging"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm3e-36gb",
      "name": "SK hynix HBM3E 36GB",
      "url": "https://product.skhynix.com/products/dram/hbm.go",
      "summary": "The twelve-layer HBM3E stack appears in SK hynix’s demonstration of NVIDIA GB300.",
      "tags": [
        "HBM3E"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM3E",
        "stack_height": 12,
        "capacity_gb": 36,
        "pin_gbps": 9.6,
        "pin_qualifier": "At least",
        "bandwidth_gbs": 1230,
        "bandwidth_qualifier": "At least",
        "bus_width": null,
        "base_die": null,
        "dram_process": null,
        "packaging": "Advanced MR-MUF",
        "status": "Production reported",
        "status_date": "2024-09-26",
        "sample_date": null,
        "production_date": "2024-09-26",
        "accelerators": "NVIDIA GB300 (maker exhibit)",
        "notes": "The current family portfolio gives 1.23+ TB/s; the 2024 production announcement gives a 9.6 Gb/s pin rate."
      },
      "sources": [
        {
          "url": "https://product.skhynix.com/products/dram/hbm.go",
          "title": "SK hynix: SK hynix HBM3E 36GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "notes"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/sk-hynix-begins-volume-production-of-the-world-first-12-layer-hbm3e/",
          "title": "SK hynix HBM3E production announcement",
          "accessed": "2026-11-11",
          "fields": [
            "status",
            "status_date",
            "production_date",
            "packaging"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/tsmc-technology-symposium-2026/",
          "title": "SK hynix at TSMC Symposium 2026",
          "accessed": "2026-11-11",
          "fields": [
            "accelerators"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm3e-48gb",
      "name": "SK hynix HBM3E 48GB",
      "url": "https://news.skhynix.com/en/sk-hynix-announces-16-layer-hbm3e-at-sk-ai-summit-2024/",
      "summary": "A sixteen-layer HBM3E development shown publicly at CES, distinct from the production twelve-layer stack.",
      "tags": [
        "HBM3E"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM3E",
        "stack_height": 16,
        "capacity_gb": 48,
        "pin_gbps": null,
        "pin_qualifier": null,
        "bandwidth_gbs": null,
        "bandwidth_qualifier": null,
        "bus_width": null,
        "base_die": null,
        "dram_process": null,
        "packaging": "Advanced MR-MUF",
        "status": "Demonstrated",
        "status_date": "2025-01-10",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Commercialization was planned for 2025. The cited CES exhibit confirms a demonstration, not customer shipments."
      },
      "sources": [
        {
          "url": "https://news.skhynix.com/en/sk-hynix-announces-16-layer-hbm3e-at-sk-ai-summit-2024/",
          "title": "SK hynix: SK hynix HBM3E 48GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "packaging",
            "notes"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/ces-2025-video-ride-the-ai-wave-with-sk-hynix/",
          "title": "SK hynix CES 2025 exhibit",
          "accessed": "2026-11-11",
          "fields": [
            "status",
            "status_date"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm4-24gb",
      "name": "SK hynix HBM4 24GB",
      "url": "https://product.skhynix.com/products/dram/hbm.go",
      "summary": "The 8-layer HBM4 configuration in SK hynix’s published portfolio, with a foundry logic base die.",
      "tags": [
        "HBM4"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM4",
        "stack_height": 8,
        "capacity_gb": 24,
        "pin_gbps": 11,
        "pin_qualifier": "At least",
        "bandwidth_gbs": 2800,
        "bandwidth_qualifier": "Over",
        "bus_width": 2048,
        "base_die": "TSMC logic foundry process; node not stated here",
        "dram_process": null,
        "packaging": "Advanced MR-MUF",
        "status": "Catalogued",
        "status_date": null,
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Pin rate and bandwidth are current family portfolio ratings. SK hynix put HBM4 into mass production in Q3 2025 and began mass shipments in Q2 2026. It names the 12-layer 36GB HBM4 as the stack inside NVIDIA Vera Rubin. Production of the 24GB and 48GB stacks is not inferred."
      },
      "sources": [
        {
          "url": "https://product.skhynix.com/products/dram/hbm.go",
          "title": "SK hynix: SK hynix HBM4 24GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "status",
            "notes"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/tsmc-technology-symposium-2026/",
          "title": "SK hynix: base die collaboration with TSMC",
          "accessed": "2026-11-11",
          "fields": [
            "base_die"
          ]
        },
        {
          "url": "https://product.skhynix.com/products/dram/hbm/hbm4.go",
          "title": "SK hynix HBM4: 2K I/O and Advanced MR-MUF",
          "accessed": "2026-11-11",
          "fields": [
            "packaging",
            "bus_width"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm4-36gb",
      "name": "SK hynix HBM4 36GB",
      "url": "https://product.skhynix.com/products/dram/hbm.go",
      "summary": "The 12-layer HBM4 configuration in SK hynix’s published portfolio, with a foundry logic base die.",
      "tags": [
        "HBM4"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM4",
        "stack_height": 12,
        "capacity_gb": 36,
        "pin_gbps": 11,
        "pin_qualifier": "At least",
        "bandwidth_gbs": 2800,
        "bandwidth_qualifier": "Over",
        "bus_width": 2048,
        "base_die": "TSMC logic foundry process; node not stated here",
        "dram_process": null,
        "packaging": "Advanced MR-MUF",
        "status": "Family production reported",
        "status_date": "2025-10-29",
        "sample_date": "2025-03-19",
        "production_date": null,
        "accelerators": "NVIDIA Vera Rubin (supplier confirmed)",
        "notes": "Pin rate and bandwidth are current family portfolio ratings. SK hynix put HBM4 into mass production in Q3 2025 and began mass shipments in Q2 2026. It names the 12-layer 36GB HBM4 as the stack inside NVIDIA Vera Rubin. Production of the 24GB and 48GB stacks is not inferred."
      },
      "sources": [
        {
          "url": "https://product.skhynix.com/products/dram/hbm.go",
          "title": "SK hynix: SK hynix HBM4 36GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/tsmc-technology-symposium-2026/",
          "title": "SK hynix: base die collaboration with TSMC",
          "accessed": "2026-11-11",
          "fields": [
            "base_die"
          ]
        },
        {
          "url": "https://product.skhynix.com/products/dram/hbm/hbm4.go",
          "title": "SK hynix HBM4: 2K I/O and Advanced MR-MUF",
          "accessed": "2026-11-11",
          "fields": [
            "packaging",
            "bus_width"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/tsmc-oip-conference-2026/",
          "title": "SK hynix: Vera Rubin uses 12-layer 36GB HBM4",
          "accessed": "2026-11-11",
          "fields": [
            "accelerators"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/sk-hynix-ships-world-first-12-layer-hbm4-samples-to-customers/",
          "title": "SK hynix HBM4 samples",
          "accessed": "2026-11-11",
          "fields": [
            "sample_date"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/sk-hynix-announces-3q25-financial-results/",
          "title": "SK hynix Q3 2025: HBM4 entered mass production",
          "accessed": "2026-11-11",
          "fields": [
            "status",
            "status_date"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/q2-2026-business-results/",
          "title": "SK hynix Q2 2026: HBM4 mass shipments began",
          "accessed": "2026-11-11",
          "fields": [
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm4-48gb",
      "name": "SK hynix HBM4 48GB",
      "url": "https://product.skhynix.com/products/dram/hbm.go",
      "summary": "The 16-layer HBM4 configuration in SK hynix’s published portfolio, with a foundry logic base die.",
      "tags": [
        "HBM4"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM4",
        "stack_height": 16,
        "capacity_gb": 48,
        "pin_gbps": 11,
        "pin_qualifier": "At least",
        "bandwidth_gbs": 2800,
        "bandwidth_qualifier": "Over",
        "bus_width": 2048,
        "base_die": "TSMC logic foundry process; node not stated here",
        "dram_process": null,
        "packaging": "Advanced MR-MUF",
        "status": "Demonstrated",
        "status_date": "2026-01-05",
        "sample_date": null,
        "production_date": null,
        "accelerators": null,
        "notes": "Pin rate and bandwidth are current family portfolio ratings. SK hynix put HBM4 into mass production in Q3 2025 and began mass shipments in Q2 2026. It names the 12-layer 36GB HBM4 as the stack inside NVIDIA Vera Rubin. Production of the 24GB and 48GB stacks is not inferred."
      },
      "sources": [
        {
          "url": "https://product.skhynix.com/products/dram/hbm.go",
          "title": "SK hynix: SK hynix HBM4 48GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "bandwidth_gbs",
            "bandwidth_qualifier",
            "notes"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/tsmc-technology-symposium-2026/",
          "title": "SK hynix: base die collaboration with TSMC",
          "accessed": "2026-11-11",
          "fields": [
            "base_die"
          ]
        },
        {
          "url": "https://product.skhynix.com/products/dram/hbm/hbm4.go",
          "title": "SK hynix HBM4: 2K I/O and Advanced MR-MUF",
          "accessed": "2026-11-11",
          "fields": [
            "packaging",
            "bus_width"
          ]
        },
        {
          "url": "https://news.skhynix.com/en/sk-hynix-showcases-next-generation-ai-memory-innovations-at-ces-2026/",
          "title": "SK hynix: 48GB 16-layer exhibit",
          "accessed": "2026-11-11",
          "fields": [
            "status",
            "status_date"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    },
    {
      "id": "sk-hynix-hbm4e-48gb",
      "name": "SK hynix HBM4E 48GB",
      "url": "https://news.skhynix.com/en/sk-hynix-ships-samples-of-12-layer-next-gen-hbm4e-2/",
      "summary": "The twelve-layer HBM4E sample raises per-stack capacity and the published maximum pin rate.",
      "tags": [
        "HBM4E"
      ],
      "fields": {
        "maker": "SK hynix",
        "generation": "HBM4E",
        "stack_height": 12,
        "capacity_gb": 48,
        "pin_gbps": 16,
        "pin_qualifier": "Up to",
        "bandwidth_gbs": null,
        "bandwidth_qualifier": null,
        "bus_width": null,
        "base_die": null,
        "dram_process": null,
        "packaging": "Advanced MR-MUF",
        "status": "Sampling",
        "status_date": "2026-06-18",
        "sample_date": "2026-06-18",
        "production_date": null,
        "accelerators": null,
        "notes": "The release publishes pin rate but no bandwidth figure; bandwidth is left empty rather than calculated from an assumed interface width."
      },
      "sources": [
        {
          "url": "https://news.skhynix.com/en/sk-hynix-ships-samples-of-12-layer-next-gen-hbm4e-2/",
          "title": "SK hynix: SK hynix HBM4E 48GB",
          "accessed": "2026-11-11",
          "fields": [
            "maker",
            "generation",
            "capacity_gb",
            "stack_height",
            "pin_gbps",
            "pin_qualifier",
            "packaging",
            "status",
            "status_date",
            "sample_date",
            "notes"
          ]
        }
      ],
      "verifiedAt": "2026-11-11",
      "featured": false
    }
  ]
}