Methodology
A source for each value, a defined stack identity, and a dated public milestone. Research checked 2026-11-11.
What makes one record
One row identifies a maker, generation, capacity and DRAM stack configuration. A published speed bin is a separate variant when the maker explicitly lists it. SK hynix’s historical Hot Chips lineup names each capacity and speed combination; those rows are labelled historical catalog entries. These descriptive identities do not imply an orderable manufacturer part number.
Repeated announcements of the same stack are merged into one record. Planned extensions remain separate from sampled stacks, and a packaging prototype is labelled as a demonstration. The three established suppliers are covered. Records need at least three supported specification or milestone fields beyond name, URL and summary.
How rates are compared
Capacity and bandwidth describe one stack. Layer counts exclude the base die. GB and Gb retain the vendors’ notation; bandwidth in TB/s is converted to GB/s with a decimal factor of 1,000. “Up to”, “over”, “at least” and family ranges remain visible in the table, detail and compare views. Sorting uses the published numeric endpoint; it does not rank guaranteed application throughput.
Family ratings are explicitly identified in the reading notes. Capacity/height options are paired only where the published lineup supports them. Speeds are not assigned to planned extensions or higher stacks solely because a related part has that speed. Bandwidth is left null when the source only publishes a pin rate.
When vendor specifications change
Current portfolio specifications take priority for catalog ratings; dated releases establish milestones. Samsung’s HBM3E catalog currently lists up to 9.2 Gb/s and 1,180 GB/s, while earlier development publicity gives higher ceilings. SK hynix’s current HBM3E portfolio likewise differs from its original launch rating. The affected records explain these differences and retain the relevant evidence.
How to read status dates
A status date identifies the publication supporting that milestone. Year-only or month-only evidence keeps that precision. A planned ramp is not promoted to production when the target date passes. A production report does not prove present inventory or continued manufacture. Current undated catalog entries have no invented launch date and are omitted from the timeline.
“Production reported” requires an explicit statement of production or shipments. “Family production reported” means the maker confirms shipments of the generation without disclosing a capacity split; it does not establish variant-level shipment dates. “Sampling” requires customer samples. “Demonstrated” covers exhibited hardware or a developed prototype. “Planned” covers a named future configuration. “Catalogued” means a published portfolio entry. “Historical catalog” preserves a past lineup without asserting present availability.
How accelerator links are confirmed
The maker or platform vendor must connect the memory maker and stack variant to a named platform. Shipping, design-in, availability and exhibit relationships are labelled as such. A GPU specifying HBM3E does not establish which vendor supplied it. Supplier assignments, exclusivity and qualification dates remain empty without explicit public evidence.
Scope left out
CXMT and JHICC HBM reports lack enough publicly verified part specifications for comparable rows. Samsung HBM-PIM is a processing-in-memory architecture outside this conventional stack catalog. Micron HBM4E has a development roadmap but no sufficiently specified public stack variant in the reviewed material. No universal JEDEC ceiling is copied onto an unannounced vendor part.
Corrections and funding
Send corrections with a public source to hello@hbmtracker.com. Changed facts update the verification date. Sponsorship is labelled and never changes specifications, inclusion or sorting. The dataset is published by Beundra AB and is available as CSV and JSON under CC BY 4.0. Source material remains the property of its publishers.
Field dictionary
- Maker
- Memory manufacturer.
- Generation
- Maker’s HBM generation designation.
- DRAM layers (high)
- DRAM dies in the stack; excludes the base die.
- Stack capacity (GB)
- Capacity of one stack, in the maker’s GB units; not accelerator total memory.
- Pin rate (Gb/s)
- Published pin rate. Read with Pin qualifier; a limit is not a guaranteed operating point.
- Pin qualifier
- “Up to”, “Over” and range lower bounds preserve the source’s qualification.
- Stack bandwidth (GB/s)
- Published bandwidth of one stack. Read with Bandwidth qualifier. TB/s is normalized to GB/s using 1,000.
- Bandwidth qualifier
- The source’s bound or range, preserved alongside the numeric value.
- Interface (bits)
- Data I/O width of one stack; not the complete accelerator bus.
- Base die
- Published base/buffer die implementation or foundry. Null means not disclosed in the cited evidence.
- DRAM process
- Vendor’s process label, not a normalized physical dimension.
- Bonding / package
- Published stacking or package process.
- Evidence status
- Last supported milestone; historical production does not imply current orderability.
- Status evidence date
- Date of the supporting publication, with original precision (YYYY, YYYY-MM or YYYY-MM-DD). Not necessarily the first shipment day.
- Sample evidence date
- Publication confirming samples, preserving date precision; not an inferred qualification date.
- Production evidence date
- Publication confirming production or shipments. A report date, not an exact factory ramp date.
- Confirmed platform links
- Platforms explicitly linked to this maker and variant by a first-party source. Design-in is distinguished from shipping.
- Reading notes
- Variant-specific context, source conflicts, historical status and unconfirmed details.
First-party source register
Vendor product pages, technical presentations, company releases and investor material. Company newsroom releases are first-party press; there are no third-party press values in the published catalog.
- Micron: Micron HBM2E 8GB · accessed 2026-11-11
- Micron: Micron HBM3E 36GB · accessed 2026-11-11
- Micron: HBM3E platform design-ins · accessed 2026-11-11
- Micron HBM3E production evidence · accessed 2026-11-11
- Micron FQ3 2025: MI355X and HBM3E volume ramp · accessed 2026-11-11
- Micron: Micron HBM4 48GB · accessed 2026-11-11
- Micron FY2026 Form 10-K, product section (PDF page 9) · accessed 2026-11-11
- Micron HBM4 interface specification · accessed 2026-11-11
- Samsung: Samsung 12-layer TSV · 24GB · accessed 2026-11-11
- Samsung: Samsung Aquabolt 8GB · accessed 2026-11-11
- Samsung: Samsung Flashbolt 16GB · accessed 2026-11-11
- Samsung: Samsung HBM2 4GB · first generation · accessed 2026-11-11
- Samsung: Samsung HBM2 8GB · first generation · accessed 2026-11-11
- Samsung: Samsung HBM3E 36GB · accessed 2026-11-11
- Samsung: HBM3 8H and 12H mass production · accessed 2026-11-11
- Samsung 36GB HBM3E development · accessed 2026-11-11
- Samsung and AMD: primary HBM4 supply for MI455X · accessed 2026-11-11
- Samsung: Samsung HBM4 48GB · accessed 2026-11-11
- Samsung: Samsung HBM4E 64GB · accessed 2026-11-11
- SK hynix: SK hynix HBM · 4-high · accessed 2026-11-11
- AMD: Fiji and memory partner SK Hynix · accessed 2026-11-11
- SK hynix: SK hynix HBM3 16GB · accessed 2026-11-11
- SK hynix: SK hynix HBM2 8GB · 2 Gb/s · accessed 2026-11-11
- SK hynix: SK hynix HBM4 48GB · accessed 2026-11-11
- SK hynix: 16GB HBM2E mass production, 1,024 I/Os · accessed 2026-11-11
- SK hynix: HBM3 mass production and NVIDIA H100 supply · accessed 2026-11-11
- SK hynix: SK hynix HBM3 24GB · accessed 2026-11-11
- SK hynix HBM3E production announcement · accessed 2026-11-11
- SK hynix HBM3E production announcement · accessed 2026-11-11
- SK hynix: base die collaboration with TSMC · accessed 2026-11-11
- SK hynix: SK hynix HBM3E 48GB · accessed 2026-11-11
- SK hynix CES 2025 exhibit · accessed 2026-11-11
- SK hynix HBM4: 2K I/O and Advanced MR-MUF · accessed 2026-11-11
- SK hynix: Vera Rubin uses 12-layer 36GB HBM4 · accessed 2026-11-11
- SK hynix HBM4 samples · accessed 2026-11-11
- SK hynix Q3 2025: HBM4 entered mass production · accessed 2026-11-11
- SK hynix Q2 2026: HBM4 mass shipments began · accessed 2026-11-11
- SK hynix: 48GB 16-layer exhibit · accessed 2026-11-11
- SK hynix: SK hynix HBM4E 48GB · accessed 2026-11-11