Micron HBM2E 8GB

MakerMemory manufacturer.

Micron1

GenerationMaker’s HBM generation designation.

HBM2E1

DRAM layers highDRAM dies in the stack; excludes the base die.

41

Stack capacity GBCapacity of one stack, in the maker’s GB units; not accelerator total memory.

81

Pin rate Gb/sPublished pin rate. Read with Pin qualifier; a limit is not a guaranteed operating point.

Up to 3.21

Stack bandwidth GB/sPublished bandwidth of one stack. Read with Bandwidth qualifier. TB/s is normalized to GB/s using 1,000.

Up to 4101

Interface bitsData I/O width of one stack; not the complete accelerator bus.

1,0241

Base diePublished base/buffer die implementation or foundry. Null means not disclosed in the cited evidence.

Not published

DRAM processVendor’s process label, not a normalized physical dimension.

Not published

Bonding / packagePublished stacking or package process.

Not published

Evidence statusLast supported milestone; historical production does not imply current orderability.

Catalogued1

Status evidence dateDate of the supporting publication, with original precision (YYYY, YYYY-MM or YYYY-MM-DD). Not necessarily the first shipment day.

Not published

Sample evidence datePublication confirming samples, preserving date precision; not an inferred qualification date.

Not published

Production evidence datePublication confirming production or shipments. A report date, not an exact factory ramp date.

Not published

Confirmed platform linksPlatforms explicitly linked to this maker and variant by a first-party source. Design-in is distinguished from shipping.

Not published

Reading notesVariant-specific context, source conflicts, historical status and unconfirmed details.

Technical brief tables 1 and 3 document the capacity, stack height and maximum family rating. The brief alone does not establish a variant-specific shipment date.1

1. Micron: Micron HBM2E 8GB accessed 2026-11-11

Every date is the publication date of the maker’s evidence. See who packages, bonds and tests Micron HBM on HBM Suppliers. Read the method or send a correction.