HBM, HBM2 & HBM2E stacks

Where stacked DRAM started: 1 Gb/s four-high HBM in AMD Fiji, then HBM2 and HBM2E up to 16GB, 3.6 Gb/s and 460 GB/s per stack.

All figures describe one stack. Historical catalog bins and planned configurations retain their source status.

Samsung 12-layer TSV · 24GBSamsung1HBM21121241——Demonstrated12026-11-11
Micron HBM2E 16GBMicron1HBM2E181161Up to 3.21Up to 4101Catalogued12026-11-11
Samsung Flashbolt 16GBSamsung1HBM2E1811613.214101Planned12026-11-11
SK hynix HBM2E 16GBSK hynix1HBM2E181161Range 3.2–3.61Range 410–4601Production reported22026-11-11
Micron HBM2E 8GBMicron1HBM2E14181Up to 3.21Up to 4101Catalogued12026-11-11
Samsung Aquabolt 8GBSamsung1HBM2181812.41307.21Production reported12026-11-11
Samsung HBM2 8GB · first generationSamsung1HBM218181—2561Production reported12026-11-11
SK hynix HBM2 8GB · 1 Gb/sSK hynix1HBM218181111281Historical catalog12026-11-11
SK hynix HBM2 8GB · 1.6 Gb/sSK hynix1HBM2181811.612041Historical catalog12026-11-11
SK hynix HBM2 8GB · 2 Gb/sSK hynix1HBM218181212561Historical catalog12026-11-11
SK hynix HBM2E 8GBSK hynix1HBM2E14181Range 3.2–3.61Range 410–4601Catalogued12026-11-11
Samsung HBM2 4GB · first generationSamsung1HBM214141—2561Production reported12026-11-11
SK hynix HBM2 4GB · 1 Gb/sSK hynix1HBM214141111281Historical catalog12026-11-11
SK hynix HBM2 4GB · 1.6 Gb/sSK hynix1HBM2141411.612041Historical catalog12026-11-11
SK hynix HBM2 4GB · 2 Gb/sSK hynix1HBM214141212561Historical catalog12026-11-11
SK hynix HBM2 2GB · 1 Gb/sSK hynix1HBM212121111281Historical catalog12026-11-11
SK hynix HBM2 2GB · 1.6 Gb/sSK hynix1HBM2121211.612041Historical catalog12026-11-11
SK hynix HBM2 2GB · 2 Gb/sSK hynix1HBM212121212561Historical catalog12026-11-11
SK hynix HBM · 4-highSK hynix1HBM141—13—Historical catalog12026-11-11

Field definitions and evidence policy · Complete dataset with provenance