Samsung HBM4 48GB

MakerMemory manufacturer.

Samsung1

GenerationMaker’s HBM generation designation.

HBM41

DRAM layers highDRAM dies in the stack; excludes the base die.

161

Stack capacity GBCapacity of one stack, in the maker’s GB units; not accelerator total memory.

481

Pin rate Gb/sPublished pin rate. Read with Pin qualifier; a limit is not a guaranteed operating point.

Not published

Stack bandwidth GB/sPublished bandwidth of one stack. Read with Bandwidth qualifier. TB/s is normalized to GB/s using 1,000.

Not published

Interface bitsData I/O width of one stack; not the complete accelerator bus.

Not published

Base diePublished base/buffer die implementation or foundry. Null means not disclosed in the cited evidence.

Not published

DRAM processVendor’s process label, not a normalized physical dimension.

Not published

Bonding / packagePublished stacking or package process.

Not published

Evidence statusLast supported milestone; historical production does not imply current orderability.

Planned1

Status evidence dateDate of the supporting publication, with original precision (YYYY, YYYY-MM or YYYY-MM-DD). Not necessarily the first shipment day.

2026-02-121

Sample evidence datePublication confirming samples, preserving date precision; not an inferred qualification date.

Not published

Production evidence datePublication confirming production or shipments. A report date, not an exact factory ramp date.

Not published

Confirmed platform linksPlatforms explicitly linked to this maker and variant by a first-party source. Design-in is distinguished from shipping.

Not published

Reading notesVariant-specific context, source conflicts, historical status and unconfirmed details.

Capacity expansion aligned to future customer timelines. Shipping and final speed are unconfirmed.1

1. Samsung: Samsung HBM4 48GB accessed 2026-11-11

Every date is the publication date of the maker’s evidence. See who packages, bonds and tests Samsung HBM on HBM Suppliers. Read the method or send a correction.