Samsung HBM4 36GB

The 36GB capacity option described in Samsung’s commercial HBM4 announcement.

Production reported · evidence dated 2026-02-12 · verified 2026-11-11

Read maker evidenceCompare these stacksAll HBM4 & HBM4E

Stack specifications

MakerMemory manufacturer.
Samsung1
GenerationMaker’s HBM generation designation.
HBM41
DRAM layers highDRAM dies in the stack; excludes the base die.
121
Stack capacity GBCapacity of one stack, in the maker’s GB units; not accelerator total memory.
361
Pin rate Gb/sPublished pin rate. Read with Pin qualifier; a limit is not a guaranteed operating point.
11.71
Stack bandwidth GB/sPublished bandwidth of one stack. Read with Bandwidth qualifier. TB/s is normalized to GB/s using 1,000.
Up to 3,3001
Interface bitsData I/O width of one stack; not the complete accelerator bus.
2,0481
Base diePublished base/buffer die implementation or foundry. Null means not disclosed in the cited evidence.
Samsung Foundry 4nm logic1
DRAM processVendor’s process label, not a normalized physical dimension.
1c (6th-generation 10nm-class)1
Bonding / packagePublished stacking or package process.
Not published
Evidence statusLast supported milestone; historical production does not imply current orderability.
Production reported1
Status evidence dateDate of the supporting publication, with original precision (YYYY, YYYY-MM or YYYY-MM-DD). Not necessarily the first shipment day.
2026-02-121
Sample evidence datePublication confirming samples, preserving date precision; not an inferred qualification date.
Not published
Production evidence datePublication confirming production or shipments. A report date, not an exact factory ramp date.
2026-02-121
Confirmed platform linksPlatforms explicitly linked to this maker and variant by a first-party source. Design-in is distinguished from shipping.
AMD Instinct MI455X (primary HBM4 supply agreed, Mar 2026)2
Reading notesVariant-specific context, source conflicts, historical status and unconfirmed details.
The release describes 24–36GB through 12-layer stacking. Stable rate is 11.7 Gb/s, headroom up to 13 Gb/s; 3.3 TB/s is the maximum stack bandwidth, not the bandwidth at 11.7 Gb/s.1

Source record

  1. Samsung: Samsung HBM4 36GB accessed 2026-11-11
  2. Samsung and AMD: primary HBM4 supply for MI455X accessed 2026-11-11

Every date is the publication date of the maker’s evidence. See who packages, bonds and tests Samsung HBM on HBM Suppliers. Read the method or send a correction.

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